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plasma-enhanced chemical vapor deposition


Identification code: 300443558



Alternative term/s

  • PECVD
  • plasma enhanced chemical vapor deposition

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Scope note:

A chemical vapor deposition process used to deposit a single thin layer (thickness less than 20 micrometer) or multiple thin layers of materials in a gas state (vapor) to a solid state over a substrate. In PECVD, deposition is achieved by introducing reactant gases between parallel electrodes—a grounded electrode and an RF (Radio Frequency)-energized electrode. The capacitive coupling between the electrodes excites the reactant gases into a plasma, which induces a chemical reaction and results in the reaction product being deposited on the substrate. In conservation, PECVD has been used for protection or surface modification of metallic artifacts.

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